Investigations about Al and Cu-Based Planar Spiral Inductors on Sapphire for GaN-Based RF Applications

نویسندگان

چکیده

Conventionally, Cu is preferred over Al to fabricate integrated inductors with higher quality factors on either silicon or sapphire substrates, profiting from its lower resistivity. However, after investigating and comparing these two kinds of metal multilayers in terms fabrication process, electrical conductivity, in-depth profile analysis performance actual inductors, the Al-based multilayer exhibits competitive ability fabricating thin-film compared Cu-based multilayers. This attributed degradation conductivity out oxidation sublayers forming alloys between them. Furthermore, order avoid complicated de-embedding procedures characterization on-chip a six-element equivalent physical model, which takes parasitic effect radio-frequency (RF) test structures into account, proposed validated by matching well embedded measurement results.

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ژورنال

عنوان ژورنال: Applied sciences

سال: 2021

ISSN: ['2076-3417']

DOI: https://doi.org/10.3390/app11115164